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Capacity Items DRIE Laser
Wafer Thickness 100 um – 500 um 100 um – 500 um
TSV Size Uniformity 5% 10%
TSV Size 10 – 100 um 100 – 200 um
Aspect Ratio 1-10 1-5
Drilling Rate 8 – 10 um/min 5 – 10 TSVs/s
Insulation Thickness 5k – 25 k A 5k – 25 k A
Metallization Ti/Cu/Ni/Au/Ag Ti/Cu/Ni/Au/Ag

Thickness: 200~500 µm
Isolation layer: 5,000~20,000 Å

Sputter : Ti/Cu =1KA/5KA or Ti/Ni/Ag = 1KA/2KA/3.5um
Plating : Cu/Ni/Au = 10um/3um/0.3um

 

 
 
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